номер части GS66516B-TR производитель GaN Systems категории MOSFET RoHS Техническая спецификация GS66516B-TR Описание MOSFET 650V, 60A, GaN E-mode, GaNPX package, Top-side cooling
производитель GaN Systems категории MOSFET Channel Mode Enhancement Id - Continuous Drain Current 60 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Packaging Reel Qg - Gate Charge 14.2 nC Rds On - Drain-Source Resistance 32 mOhms Technology GaN Tradename GaNPX Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 650 V Vgs - Gate-Source Voltage - 10 V, + 7 V Vgs th - Gate-Source Threshold Voltage 2.6 V