номер части R6030MNX производитель ROHM Semiconductor категории MOSFET RoHS Техническая спецификация R6030MNX Описание MOSFET Nch 600V 30A TO-220FM Pwr MOSFET
производитель ROHM Semiconductor категории MOSFET Channel Mode Enhancement Id - Continuous Drain Current 30 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-220FP-3 Packaging Tube Pd - Power Dissipation 90 W Qg - Gate Charge 43 nC Rds On - Drain-Source Resistance 110 mOhms Technology SI Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 600 V Vgs - Gate-Source Voltage - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage 3 V