номер части R6024KNX производитель ROHM Semiconductor категории MOSFET RoHS Техническая спецификация R6024KNX Описание MOSFET Nch 600V 24A Si MOSFET
производитель ROHM Semiconductor категории MOSFET Channel Mode Enhancement Id - Continuous Drain Current 24 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-220-3 Packaging Bulk Pd - Power Dissipation 74 W Qg - Gate Charge 45 nC Rds On - Drain-Source Resistance 150 mOhms Technology SI Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 600 V Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 3 V