номер части R6009ENX производитель ROHM Semiconductor категории MOSFET RoHS Техническая спецификация R6009ENX Описание MOSFET 10V Drive Nch MOSFET
производитель ROHM Semiconductor категории MOSFET Channel Mode Enhancement Id - Continuous Drain Current 9 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-220-3 Packaging Bulk Pd - Power Dissipation 48 W Qg - Gate Charge 23 nC Rds On - Drain-Source Resistance 500 mOhms Technology SI Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 600 V Vgs - Gate-Source Voltage - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage 2 V